Abstract
We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ~2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N≥4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.
Original language | English |
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Article number | 013040 |
Pages (from-to) | 1-14 |
Number of pages | 14 |
Journal | New Journal of Physics |
Volume | 13 |
DOIs | |
Publication status | Published - 26 Jan 2011 |
MoE publication type | A1 Journal article-refereed |
Keywords
- circuits
- Coulomb-clockade
- device
- electron pump
- fluctuations
- on-chip resistors
- trap
- tunnel-junctions