We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ~2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N≥4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.
- electron pump
- on-chip resistors