Single-charge escape processes through a hybrid turnstile in a dissipative environment

S.V. Lotkhov, O.P. Saira, J.P. Pekola, A.B. Zorin

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)
165 Downloads (Pure)


We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ~2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N≥4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.
Original languageEnglish
Article number013040
Pages (from-to)1-14
Number of pages14
JournalNew Journal of Physics
Publication statusPublished - 26 Jan 2011
MoE publication typeA1 Journal article-refereed


  • circuits
  • Coulomb-clockade
  • device
  • electron pump
  • fluctuations
  • on-chip resistors
  • trap
  • tunnel-junctions


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