Simulation of photon transport in resonant double-diode structures

Pyry Kivisaari*, Mikko Partanen, Toufik Sadi, Jani Oksanen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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The optical and electrical properties of planar optoelectronic devices are well known, but their fully self-consistent modeling has remained a serious challenge. At the same time, the improving device fabrication capabilities and shrinking device sizes make it possible to reach higher efficiencies and develop totally new device applications. Success in this context, however, requires sophisticated device modeling frameworks, such as fully self-consistent models of optical and electrical characteristics. In this article, we explore the predictions provided by the recently introduced interference radiative transfer (IRT) model and apply it to a simplified double-diode structure presently used to study the possibility of electroluminescent cooling. The purpose of this proof-of-principle study is to show that the IRT model is straightforward to implement once one has access to the dyadic Green's functions, and that it produces solutions that satisfy the more general quantized fluctuational electrodynamics framework. We examine the photon numbers, propagating optical intensities and net radiative recombination rates from the IRT model solved by assuming a constant quasi-Fermi level separation in the active region. We find that they behave qualitatively as expected for the chosen device structure. However, the results also exhibit waveoptical characteristics, as e.g. the propagating intensity depends non-monotonously on the propagation angle due to constructive and destructive interferences. Based on the results, the IRT model offers a promising way to self-consistently combine the modeling of photon and charge carrier dynamics, also fully accounting for all interference effects.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
EditorsMasakazu Sugiyama, Laurent Lombez, Laurent Lombez, Alexandre Freundlich
ISBN (Electronic)9781510624689
Publication statusPublished - 1 Jan 2019
MoE publication typeA4 Conference publication
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, United States
Duration: 5 Feb 20197 Feb 2019
Conference number: 8

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferencePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country/TerritoryUnited States
CitySan Francisco


  • Drift-diffusion model
  • Dyadic Green's functions
  • Electroluminescent cooling
  • Fluctuational electrodynamics
  • Radiative transfer


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