Simple ALD process for ε-Fe2O3 thin films

A. Tanskanen, O. Mustonen, M. Karppinen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)
585 Downloads (Pure)

Abstract

Atomic layer deposition (ALD) is an advanced industrially feasible technique for fabricating functional materials as high-quality thin films. Here we exploit the technique for the first time for growing thin films of the rare ε-Fe2O3 phase that has been found only in nanoscale samples. This single-metal single-valence oxide is receiving increasing interest due to its unusually high coercivity and multiferroic properties. With ALD, polycrystalline thin films of the ε-Fe2O3 phase are achieved on various substrate surfaces at a relatively low deposition temperature (260-300 °C) from FeCl3 and H2O precursors. The films are ferrimagnetic having an ∼1.6 kOe coercive field.

Original languageEnglish
Article number056104
JournalAPL Materials
Volume5
Issue number5
DOIs
Publication statusPublished - 1 May 2017
MoE publication typeA1 Journal article-refereed

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