Silicon surface passivation with atomic layer deposited aluminum nitride

Päivikki Repo; Yameng Bao; Heli Seppänen; Perttu Sippola; Hele Savin

doi:10.1109/PVSC.2016.7750205

Silicon surface passivation with atomic layer deposited aluminum nitride

Electron Physics Group (EPG)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Title of host publication	Proceedings of the IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher	IEEE
Pages	2967-2970
Number of pages	4
ISBN (Electronic)	978-1-5090-2724-8
DOIs	https://doi.org/10.1109/PVSC.2016.7750205
Publication status	Published - 18 Nov 2016
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 Conference number: 43

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	United States
City	Portland
Period	05/06/2016 → 10/06/2016

Keywords

aluminum nitride
atomic layer deposition
surface passivation

Access to Document

10.1109/PVSC.2016.7750205

OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

@inproceedings{b3e17dab7195443cac3a08db87da1c38,

title = "Silicon surface passivation with atomic layer deposited aluminum nitride",

keywords = "aluminum nitride, atomic layer deposition, surface passivation",

author = "P{\"a}ivikki Repo and Yameng Bao and Heli Sepp{\"a}nen and Perttu Sippola and Hele Savin",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750205",

language = "English",

pages = "2967--2970",

booktitle = "Proceedings of the IEEE 43rd Photovoltaic Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 05-06-2016 Through 10-06-2016",

}

TY - GEN

T1 - Silicon surface passivation with atomic layer deposited aluminum nitride

AU - Repo, Päivikki

AU - Bao, Yameng

AU - Seppänen, Heli

AU - Sippola, Perttu

AU - Savin, Hele

N1 - Conference code: 43

PY - 2016/11/18

Y1 - 2016/11/18

KW - aluminum nitride

KW - atomic layer deposition

KW - surface passivation

U2 - 10.1109/PVSC.2016.7750205

DO - 10.1109/PVSC.2016.7750205

M3 - Conference article in proceedings

SP - 2967

EP - 2970

BT - Proceedings of the IEEE 43rd Photovoltaic Specialists Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 5 June 2016 through 10 June 2016

ER -

Silicon surface passivation with atomic layer deposited aluminum nitride

Conference

Keywords

Access to Document

Equipment

OtaNano - Nanofab

Cite this