Silicon surface passivation with atomic layer deposited aluminum nitride

Paivikki Repo, Yameng Bao, Heli Seppanen, Perttu Sippola, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We propose a new surface passivation material for crystalline silicon solar cells, namely atomic layer deposited aluminium nitride (ALD AlN). AlN has multiple benefits as compared to more commonly used Al2O3, i.e. it has better optical properties, higher hydrogen concentration and better suitability for phosphorous emitter passivation due to lower fixed charge. In addition to introducing a new ALD passivation material, we study here various deposition temperatures and postdeposition heat treatments. The best surface passivation quality is reached with high deposition temperatures followed by a combination of longer low temperature anneal and a short high temperature firing. With the optimized parameters, extremely low interface defect density values of ∼4·1011 eV-1cm-2 are reached demonstrating the potential of ALD AlN as future surface passivation material.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 25 May 2018
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialist Conference - Washington, United States
Duration: 25 Jun 201730 Jun 2017
Conference number: 44

Conference

ConferenceIEEE Photovoltaic Specialist Conference
Abbreviated titlePVSC
CountryUnited States
CityWashington
Period25/06/201730/06/2017

Keywords

  • Aluminum nitride
  • Atomic layer deposition
  • Surface passivation

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    Repo, P., Bao, Y., Seppanen, H., Sippola, P., & Savin, H. (2018). Silicon surface passivation with atomic layer deposited aluminum nitride. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). IEEE. https://doi.org/10.1109/PVSC.2017.8366702