Silicon surface passivation with atomic layer deposited aluminum nitride

Päivikki Repo, Yameng Bao, Heli Seppänen, Perttu Sippola, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)
Original languageEnglish
Title of host publication IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, Oregon, USA, June 5-10
PublisherIEEE
Pages2967-2970
Number of pages4
ISBN (Electronic)978-1-5090-2724-8
DOIs
Publication statusPublished - 18 Nov 2016
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Portland, United States
Duration: 5 Jun 201610 Jun 2016
Conference number: 43

Publication series

NameConference record of the IEEE Photovoltaic Specialists Conference
PublisherIEEE
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryUnited States
CityPortland
Period05/06/201610/06/2016

Keywords

  • aluminum nitride
  • atomic layer deposition
  • surface passivation

Equipment

  • Cite this

    Repo, P., Bao, Y., Seppänen, H., Sippola, P., & Savin, H. (2016). Silicon surface passivation with atomic layer deposited aluminum nitride. In IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, Oregon, USA, June 5-10 (pp. 2967-2970). [7750205] (Conference record of the IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC.2016.7750205