Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

Yameng Bao; Haibing Huang; Zhen Zhu; Jun Lv; Hele Savin

doi:10.1016/j.egypro.2016.07.085

Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

Yameng Bao
, Haibing Huang
, Zhen Zhu
, Jun Lv
, Hele Savin

Electron Physics Group (EPG)

China Sunergy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

13 Citations (Scopus)

188 Downloads (Pure)

Abstract

Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.

Original language	English
Title of host publication	Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
Publisher	Elsevier
Pages	304-308
Number of pages	5
Volume	92
DOIs	https://doi.org/10.1016/j.egypro.2016.07.085
Publication status	Published - 23 Sept 2016
MoE publication type	A4 Conference publication
Event	International Conference on Crystalline Silicon Photovoltaics - Chambéry, France Duration: 7 Mar 2016 → 9 Mar 2016 Conference number: 6

Publication series

Name	Energy Procedia
Publisher	Elsevier BV
ISSN (Print)	1876-6102

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Abbreviated title	SiliconPV
Country/Territory	France
City	Chambéry
Period	07/03/2016 → 09/03/2016

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10.1016/j.egypro.2016.07.085

1-s2.0-S1876610216305124-mainFinal published version, 368 KBLicence: CC BY-NC-ND

Cite this

@inproceedings{1cbafd53984841e99dca766cfec18e2a,

title = "Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition",

abstract = "Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.",

author = "Yameng Bao and Haibing Huang and Zhen Zhu and Jun Lv and Hele Savin",

year = "2016",

month = sep,

day = "23",

doi = "10.1016/j.egypro.2016.07.085",

language = "English",

volume = "92",

series = "Energy Procedia",

publisher = "Elsevier",

pages = "304--308",

booktitle = "Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)",

address = "Netherlands",

note = "International Conference on Crystalline Silicon Photovoltaics, SiliconPV ; Conference date: 07-03-2016 Through 09-03-2016",

}

Bao, Y, Huang, H, Zhu, Z, Lv, J & Savin, H 2016, Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition. in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016). vol. 92, Energy Procedia, Elsevier, pp. 304-308, International Conference on Crystalline Silicon Photovoltaics, Chambéry, France, 07/03/2016. https://doi.org/10.1016/j.egypro.2016.07.085

Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition. / Bao, Yameng; Huang, Haibing; Zhu, Zhen et al.
Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016). Vol. 92 Elsevier, 2016. p. 304-308 (Energy Procedia).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

AU - Bao, Yameng

AU - Huang, Haibing

AU - Zhu, Zhen

AU - Lv, Jun

AU - Savin, Hele

N1 - Conference code: 6

PY - 2016/9/23

Y1 - 2016/9/23

N2 - Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.

AB - Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.

U2 - 10.1016/j.egypro.2016.07.085

DO - 10.1016/j.egypro.2016.07.085

M3 - Conference article in proceedings

VL - 92

T3 - Energy Procedia

SP - 304

EP - 308

BT - Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)

PB - Elsevier

T2 - International Conference on Crystalline Silicon Photovoltaics

Y2 - 7 March 2016 through 9 March 2016

ER -

Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

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