Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • China Sunergy

Abstract

Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.

Details

Original languageEnglish
Title of host publication6th International Conference on Silicon Photovoltaics, SiliconPV 2016
Publication statusPublished - 23 Sep 2016
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
Duration: 7 Mar 20169 Mar 2016
Conference number: 6

Publication series

NameENERGY PROCEDIA
PublisherElsevier
Volume92
ISSN (Electronic)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV
CountryFrance
CityChambéry
Period07/03/201609/03/2016

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