Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.
|Number of pages||5|
|Publication status||Published - 23 Sep 2016|
|MoE publication type||A4 Article in a conference publication|
|Event||International Conference on Crystalline Silicon Photovoltaics - Chambéry, France|
Duration: 7 Mar 2016 → 9 Mar 2016
Conference number: 6