Silicon Surface Passivation by Mixed Aluminum Precursors in Al2O3 Atomic Layer Deposition

Yameng Bao, Haibing Huang, Zhen Zhu, Jun Lv, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

12 Citations (Scopus)
154 Downloads (Pure)

Abstract

Dimethylaluminum chloride (DMACl) is a cost-effective aluminium precursor alternative to conventional trimethylaluminium (TMA) for Atomic Layer Deposited (ALD) Al2O3. The DMACl water process shows better passivation after high temperature firing when compared with conventional TMA water process. However, after low-temperature post-anneal its passivation quality is slightly worse than with TMA. Here we show that a mixed use of TMA and DMACl precursors in the ALD process results in better surface passivation both after 400 °C post-anneal and after an 800 °C firing step. The high-quality passivation results from the low interface defect density and high negative charge at the surface. Specifically, we investigate the role of chlorine in the ALD Al2O3 passivation by varying the TMA and DMACl pulse proportions.
Original languageEnglish
Title of host publicationProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
PublisherElsevier BV
Pages304-308
Number of pages5
Volume92
DOIs
Publication statusPublished - 23 Sept 2016
MoE publication typeA4 Conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
Duration: 7 Mar 20169 Mar 2016
Conference number: 6

Publication series

NameEnergy Procedia
PublisherElsevier BV
ISSN (Print)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV
Country/TerritoryFrance
CityChambéry
Period07/03/201609/03/2016

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