Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies

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Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies. / Inani, Heena; Mustonen, Kimmo; Markevich, Alexander; Ding, Er Xiong; Tripathi, Mukesh; Hussain, Aqeel; Mangler, Clemens; Kauppinen, Esko I.; Susi, Toma; Kotakoski, Jani.

In: Journal of Physical Chemistry C, Vol. 123, No. 20, 23.05.2019, p. 13136-13140.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Inani, H, Mustonen, K, Markevich, A, Ding, EX, Tripathi, M, Hussain, A, Mangler, C, Kauppinen, EI, Susi, T & Kotakoski, J 2019, 'Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies', Journal of Physical Chemistry C, vol. 123, no. 20, pp. 13136-13140. https://doi.org/10.1021/acs.jpcc.9b01894

APA

Inani, H., Mustonen, K., Markevich, A., Ding, E. X., Tripathi, M., Hussain, A., ... Kotakoski, J. (2019). Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies. Journal of Physical Chemistry C, 123(20), 13136-13140. https://doi.org/10.1021/acs.jpcc.9b01894

Vancouver

Author

Inani, Heena ; Mustonen, Kimmo ; Markevich, Alexander ; Ding, Er Xiong ; Tripathi, Mukesh ; Hussain, Aqeel ; Mangler, Clemens ; Kauppinen, Esko I. ; Susi, Toma ; Kotakoski, Jani. / Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies. In: Journal of Physical Chemistry C. 2019 ; Vol. 123, No. 20. pp. 13136-13140.

Bibtex - Download

@article{99adab1df3624ff3b8b85deecaf0dc50,
title = "Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies",
abstract = "The chemical and electrical properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, it often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of ∼1 ion/nm2, we find Si-substitution densities of 0.15 nm-2 in graphene and 0.05 nm-2 in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with ∼2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and -2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon.",
author = "Heena Inani and Kimmo Mustonen and Alexander Markevich and Ding, {Er Xiong} and Mukesh Tripathi and Aqeel Hussain and Clemens Mangler and Kauppinen, {Esko I.} and Toma Susi and Jani Kotakoski",
note = "| openaire: EC/H2020/756277/EU//ATMEN",
year = "2019",
month = "5",
day = "23",
doi = "10.1021/acs.jpcc.9b01894",
language = "English",
volume = "123",
pages = "13136--13140",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "AMERICAN CHEMICAL SOCIETY",
number = "20",

}

RIS - Download

TY - JOUR

T1 - Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies

AU - Inani, Heena

AU - Mustonen, Kimmo

AU - Markevich, Alexander

AU - Ding, Er Xiong

AU - Tripathi, Mukesh

AU - Hussain, Aqeel

AU - Mangler, Clemens

AU - Kauppinen, Esko I.

AU - Susi, Toma

AU - Kotakoski, Jani

N1 - | openaire: EC/H2020/756277/EU//ATMEN

PY - 2019/5/23

Y1 - 2019/5/23

N2 - The chemical and electrical properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, it often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of ∼1 ion/nm2, we find Si-substitution densities of 0.15 nm-2 in graphene and 0.05 nm-2 in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with ∼2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and -2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon.

AB - The chemical and electrical properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, it often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of ∼1 ion/nm2, we find Si-substitution densities of 0.15 nm-2 in graphene and 0.05 nm-2 in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with ∼2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and -2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon.

UR - http://www.scopus.com/inward/record.url?scp=85066144976&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.9b01894

DO - 10.1021/acs.jpcc.9b01894

M3 - Article

VL - 123

SP - 13136

EP - 13140

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 20

ER -

ID: 34393900