Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

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Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography. / Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka.

In: Nanotechnology, Vol. 28, No. 8, 085303, 24.02.2017.

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@article{d39bd1484e194b49897f1ae8ad0fc9fc,
title = "Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography",
abstract = "In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16: 1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.",
keywords = "FIB lithography, PEALD SiO2, HAR silicon machining, resist-free, nanofabrication, COMPONENT ANALYSIS, SIO2",
author = "Zhengjun Liu and Ali Shah and Tapani Alasaarela and Nikolai Chekurov and Hele Savin and Ilkka Tittonen",
year = "2017",
month = "2",
day = "24",
doi = "10.1088/1361-6528/aa5650",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
number = "8",

}

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TY - JOUR

T1 - Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

AU - Liu, Zhengjun

AU - Shah, Ali

AU - Alasaarela, Tapani

AU - Chekurov, Nikolai

AU - Savin, Hele

AU - Tittonen, Ilkka

PY - 2017/2/24

Y1 - 2017/2/24

N2 - In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16: 1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

AB - In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16: 1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

KW - FIB lithography

KW - PEALD SiO2

KW - HAR silicon machining

KW - resist-free

KW - nanofabrication

KW - COMPONENT ANALYSIS

KW - SIO2

U2 - 10.1088/1361-6528/aa5650

DO - 10.1088/1361-6528/aa5650

M3 - Article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 8

M1 - 085303

ER -

ID: 11274472