Silicon-Based Cooling Elements

David Leadley*, Martin Prest, Jouni Ahopelto, Tom Brien, David Gunnarsson, Phil Mauskopf, Juha Muhonen, Maksym Myronov, Hung Nguyen, Evan Parker, Mika Prunnila, James Richardson-Bullock, Vishal Shah, Terry Whall, Qing Tai Zhao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

Abstract

This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1-xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

Original languageEnglish
Title of host publicationBeyond CMOS Nanodevices 1
PublisherWILEY-BLACKWELL
Pages303-330
Number of pages28
ISBN (Electronic)9781118984772
ISBN (Print)9781848216549
DOIs
Publication statusPublished - 23 Jun 2014
MoE publication typeA3 Part of a book or another research book

Keywords

  • Carrier-phonon coupling
  • Silicon cold electron bolometer
  • Silicon-based Schottky barrier junctions
  • Superconductor-semiconductor (S-Sm) cooler
  • Unstrained silicon

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