SiGe LNAs for UMTS system

Petteri Paatsila; Kari Stadius; Jussi Ryynänen; Kari Halonen

doi:10.1023/A:1008357801383

SiGe LNAs for UMTS system

Atmel Finland Development Center Oy

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

Original language	English
Pages (from-to)	45-52
Number of pages	8
Journal	Analog Integrated Circuits and Signal Processing
Volume	26
Issue number	1
DOIs	https://doi.org/10.1023/A:1008357801383
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

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AU - Ryynänen, Jussi

AU - Halonen, Kari

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AB - Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

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SiGe LNAs for UMTS system

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