SiGe LNAs for UMTS system
Research output: Contribution to journal › Article › Scientific › peer-review
- Atmel Finland Development Center Oy
Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.
|Number of pages||8|
|Journal||Analog Integrated Circuits and Signal Processing|
|Publication status||Published - 2001|
|MoE publication type||A1 Journal article-refereed|