SiGe LNAs for UMTS system

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Researchers

Research units

  • Atmel Finland Development Center Oy

Abstract

Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

Details

Original languageEnglish
Pages (from-to)45-52
Number of pages8
JournalAnalog Integrated Circuits and Signal Processing
Volume26
Issue number1
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

ID: 3250149