Abstract
Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.
Original language | English |
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Pages (from-to) | 45-52 |
Number of pages | 8 |
Journal | Analog Integrated Circuits and Signal Processing |
Volume | 26 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |
MoE publication type | A1 Journal article-refereed |