SiGe LNAs for UMTS system

    Research output: Contribution to journalArticleScientificpeer-review


    Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

    Original languageEnglish
    Pages (from-to)45-52
    Number of pages8
    JournalAnalog Integrated Circuits and Signal Processing
    Issue number1
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed


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