Si nanoparticle interfaces in Si/SiO2 solar cell materials

S. Kilpeläinen; J. Kujala; F. Tuomisto; J. Slotte; Y.-W. Lu; A. Nylandsted Larsen

doi:10.1063/1.4824826

Si nanoparticle interfaces in Si/SiO₂ solar cell materials

S. Kilpeläinen, J. Kujala, F. Tuomisto, J. Slotte, Y.-W. Lu, A. Nylandsted Larsen

Department of Applied Physics

Aarhus University

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

Original language	English
Article number	164316
Pages (from-to)	1-4
Number of pages	4
Journal	Journal of Applied Physics
Volume	114
Issue number	16
DOIs	https://doi.org/10.1063/1.4824826
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

Keywords

nanoparticle
positron
silicon
silicon dioxide
solar cell

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10.1063/1.4824826

1%2E4824826Final published version, 670 KB

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title = "Si nanoparticle interfaces in Si/SiO2 solar cell materials",

abstract = "Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.",

keywords = "nanoparticle, positron, silicon, silicon dioxide, solar cell, nanoparticle, positron, silicon, silicon dioxide, solar cell, nanoparticle, positron, silicon, silicon dioxide, solar cell",

author = "S. Kilpel{\"a}inen and J. Kujala and F. Tuomisto and J. Slotte and Y.-W. Lu and {Nylandsted Larsen}, A.",

year = "2013",

doi = "10.1063/1.4824826",

language = "English",

volume = "114",

pages = "1--4",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Si nanoparticle interfaces in Si/SiO2 solar cell materials

AU - Kilpeläinen, S.

AU - Kujala, J.

AU - Tuomisto, F.

AU - Slotte, J.

AU - Lu, Y.-W.

AU - Nylandsted Larsen, A.

PY - 2013

Y1 - 2013

N2 - Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

AB - Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

U2 - 10.1063/1.4824826

DO - 10.1063/1.4824826

M3 - Article

SN - 0021-8979

VL - 114

SP - 1

EP - 4

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

M1 - 164316

ER -

Si nanoparticle interfaces in Si/SiO2 solar cell materials

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Keywords

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Si nanoparticle interfaces in Si/SiO₂ solar cell materials