Si nanoparticle interfaces in Si/SiO2 solar cell materials

S. Kilpeläinen, J. Kujala, F. Tuomisto, J. Slotte, Y.-W. Lu, A. Nylandsted Larsen

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Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.
Original languageEnglish
Article number164316
Pages (from-to)1-4
Number of pages4
JournalJournal of Applied Physics
Issue number16
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed


  • nanoparticle
  • positron
  • silicon
  • silicon dioxide
  • solar cell


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