Shot noise of a multiwalled carbon nanotube field effect transistor

Fan Wu, Taku Tsuneta, Reeta Tarkiainen, David Gunnarsson, Tai-Hong Wang, Pertti J. Hakonen

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
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Abstract

We have investigated shot noise in a 6−nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600–950MHz. We find a transconductance of 3–3.5μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3μV/√Hz for V>0 and V<0, respectively. As effective charge noise, this corresponds to (2–3)×10−5e/√Hz.
Original languageEnglish
Article number125419
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Volume75
Issue number12
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • carbon nanotube, shot noise, fiel effect transistor (FET)
  • field effect transistor (FET)
  • shot noise

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