We have investigated shot noise in a 6−nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600–950MHz. We find a transconductance of 3–3.5μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3μV/√Hz for V>0 and V<0, respectively. As effective charge noise, this corresponds to (2–3)×10−5e/√Hz.
- carbon nanotube, shot noise, fiel effect transistor (FET)
- field effect transistor (FET)
- shot noise