Abstract
We have investigated shot noise in a 6−nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600–950MHz. We find a transconductance of 3–3.5μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3μV/√Hz for V>0 and V<0, respectively. As effective charge noise, this corresponds to (2–3)×10−5e/√Hz.
| Original language | English |
|---|---|
| Article number | 125419 |
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 75 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- carbon nanotube, shot noise, fiel effect transistor (FET)
- field effect transistor (FET)
- shot noise