Shot noise in ballistic graphene

R. Danneau; F. Wu; M.F. Cracium; S. Russo; M. Y. Tomi; J. Salmilehto; A.F. Morpurgo; P. J. Hakonen

doi:10.1103/PhysRevLett.100.196802

Shot noise in ballistic graphene

R. Danneau, F. Wu, M.F. Cracium, S. Russo, M. Y. Tomi, J. Salmilehto, A.F. Morpurgo, P. J. Hakonen

Department of Applied Physics

Delft University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

192 Citations (Scopus)

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Abstract

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency (f=600–850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F∼1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

Original language	English
Article number	196802
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review Letters
Volume	100
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.100.196802
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Keywords

Dirac point
graphene field
two-dimensional carbon

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abstract = "We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency (f=600–850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F∼1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.",

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AU - Salmilehto, J.

AU - Morpurgo, A.F.

AU - Hakonen, P. J.

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Shot noise in ballistic graphene

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Keywords

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