Shot noise in ballistic graphene

R. Danneau, F. Wu, M.F. Cracium, S. Russo, M. Y. Tomi, J. Salmilehto, A.F. Morpurgo, P. J. Hakonen

Research output: Contribution to journalArticleScientificpeer-review

183 Citations (Scopus)
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We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency (f=600–850  MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F∼1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.
Original languageEnglish
Article number196802
Pages (from-to)1-4
Number of pages4
JournalPhysical Review Letters
Issue number19
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed


  • Dirac point
  • graphene field
  • two-dimensional carbon


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