Self-compensation in highly n-type InN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of St Andrews
  • University of Liverpool
  • Cornell University

Abstract

Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

Details

Original languageEnglish
Article number011903
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number1
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • compensation, defects, Indium nitride, mobility, positron annihilation

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