Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

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Abstract

Self-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressure metalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 μm is observed in the GaIn(N)As samples grown with DMHy.

Details

Original languageEnglish
Pages (from-to)3932-3934
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

    Research areas

  • luminescence, metalorganic vapor phase epitaxy, quantum dots

ID: 4149872