Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.

M. Sopanen, H. Lipsanen, J. Ahopelto

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    The effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated. The density of InP islands is observed to remain constant as a function of growth temperature in the temperature range of 620–680 °C. Below 620 °C the island density increases with decreasing temperature. Above 605 °C a subset of islands having a uniform size is observed. The degree of uniformity depends largely on the deposition rate and the size of the uniform islands on the growth temperature.
    Original languageEnglish
    Pages (from-to)3768-3770
    Number of pages3
    JournalApplied Physics Letters
    Issue number25
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed


    • metalorganic vapour phase epitaxy, indium phosphide islands


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