Self interstitials in c-Si: structure and migration mechanisms

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Scientific › peer-review

Original language	English
Title of host publication	Properties of Crystalline Silicon, EMIS Datareviews Series No. 20
Editors	R. Hull
Place of Publication	London, United Kingdom
Publisher	Institution of Electrical Engineers (IEE)
Pages	319
Publication status	Published - 1999
MoE publication type	A3 Book section, Chapters in research books

Cite this

@inbook{bc7a93ea385547368c09a068b00051f3,

title = "Self interstitials in c-Si: structure and migration mechanisms",

author = "J.-L. Mozos and R.M. Nieminen",

year = "1999",

language = "English",

pages = "319",

editor = "R. Hull",

booktitle = "Properties of Crystalline Silicon, EMIS Datareviews Series No. 20",

publisher = "Institution of Electrical Engineers (IEE)",

address = "United Kingdom",

}