Self interstitials in c-Si: structure and migration mechanisms

J.-L. Mozos, R.M. Nieminen

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

Original languageEnglish
Title of host publicationProperties of Crystalline Silicon, EMIS Datareviews Series No. 20
EditorsR. Hull
Place of PublicationLondon, United Kingdom
PublisherINSPEC, The Institution of Electrical Engineers
Pages319
Publication statusPublished - 1999
MoE publication typeA3 Part of a book or another research book

Cite this