Self-compensation in highly n-type InN

C. Rauch, F. Tuomisto, P.D.C. King, T.D. Veal, Hai Lu, W.J. Schaff

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Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Original languageEnglish
Article number011903
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed


  • compensation
  • defects
  • Indium nitride
  • mobility
  • positron annihilation


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