Self-compensation in highly n-type InN

C. Rauch, F. Tuomisto, P.D.C. King, T.D. Veal, H. Lu, W.J. Schaff

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Abstract

Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Original languageEnglish
Article number011903
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number1
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • compensation
  • defects
  • Indium nitride
  • mobility
  • positron annihilation

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    Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., & Schaff, W. J. (2012). Self-compensation in highly n-type InN. Applied Physics Letters, 101(1), 1-4. [011903]. https://doi.org/10.1063/1.4732508