Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
| Original language | English |
|---|---|
| Article number | 011903 |
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- compensation
- defects
- Indium nitride
- mobility
- positron annihilation
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Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., & Schaff, W. J. (2012). Self-compensation in highly n-type InN. Applied Physics Letters, 101(1), 1-4. [011903]. https://doi.org/10.1063/1.4732508