Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

F. Fischer; A. Waag; L. Worschech; W. Ossau; S. Scholl; G. Landwehr; J. Mäkinen; P. Hautojärvi; C. Corbel

Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

F. Fischer, A. Waag, L. Worschech, W. Ossau, S. Scholl, G. Landwehr, J. Mäkinen, P. Hautojärvi, C. Corbel

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	214-218
Journal	Journal of Crystal Growth
Volume	161
Publication status	Published - 1996
MoE publication type	A1 Journal article-refereed

Keywords

compound semiconductors
positron annihilation

Cite this

@article{52dd697850e94775a5a20364374e4da1,

title = "Self-compensation in halogen doped CdTe grown by molecular beam epitaxy",

keywords = "compound semiconductors, positron annihilation, compound semiconductors, positron annihilation, compound semiconductors, positron annihilation",

author = "F. Fischer and A. Waag and L. Worschech and W. Ossau and S. Scholl and G. Landwehr and J. M{\"a}kinen and P. Hautoj{\"a}rvi and C. Corbel",

year = "1996",

language = "English",

volume = "161",

pages = "214--218",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

AU - Fischer, F.

AU - Waag, A.

AU - Worschech, L.

AU - Ossau, W.

AU - Scholl, S.

AU - Landwehr, G.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Corbel, C.

PY - 1996

Y1 - 1996

KW - compound semiconductors

KW - positron annihilation

KW - compound semiconductors

KW - positron annihilation

KW - compound semiconductors

KW - positron annihilation

M3 - Article

VL - 161

SP - 214

EP - 218

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -