Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

V. A. Shalygin; M. D. Moldavskaya; M. Ya Vinnichenko; K. V. Maremyanin; A. A. Artemyev; V. Yu Panevin; L. E. Vorobjev; D. A. Firsov; V. V. Korotyeyev; A. V. Sakharov; E. E. Zavarin; D. S. Arteev; W. V. Lundin; A. F. Tsatsulnikov; S. Suihkonen; C. Kauppinen

doi:10.1063/1.5118771

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

V. A. Shalygin, M. D. Moldavskaya, M. Ya Vinnichenko, K. V. Maremyanin, A. A. Artemyev, V. Yu Panevin, L. E. Vorobjev, D. A. Firsov, V. V. Korotyeyev, A. V. Sakharov, E. E. Zavarin, D. S. Arteev, W. V. Lundin, A. F. Tsatsulnikov, S. Suihkonen, C. Kauppinen

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Abstract

Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.

Original language	English
Article number	183104
Journal	Journal of Applied Physics
Volume	126
Issue number	18
DOIs	https://doi.org/10.1063/1.5118771
Publication status	Published - 14 Nov 2019
MoE publication type	A1 Journal article-refereed

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Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Y., Maremyanin, K. V., Artemyev, A. A., Panevin, V. Y., Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., & Kauppinen, C. (2019). Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure. Journal of Applied Physics, 126(18), Article 183104. https://doi.org/10.1063/1.5118771

@article{a76b4059260b4bac9f55f24c902104be,

title = "Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure",

abstract = "Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.",

author = "Shalygin, {V. A.} and Moldavskaya, {M. D.} and Vinnichenko, {M. Ya} and Maremyanin, {K. V.} and Artemyev, {A. A.} and Panevin, {V. Yu} and Vorobjev, {L. E.} and Firsov, {D. A.} and Korotyeyev, {V. V.} and Sakharov, {A. V.} and Zavarin, {E. E.} and Arteev, {D. S.} and Lundin, {W. V.} and Tsatsulnikov, {A. F.} and S. Suihkonen and C. Kauppinen",

year = "2019",

month = nov,

day = "14",

doi = "10.1063/1.5118771",

language = "English",

volume = "126",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "18",

}

Shalygin, VA, Moldavskaya, MD, Vinnichenko, MY, Maremyanin, KV, Artemyev, AA, Panevin, VY, Vorobjev, LE, Firsov, DA, Korotyeyev, VV, Sakharov, AV, Zavarin, EE, Arteev, DS, Lundin, WV, Tsatsulnikov, AF, Suihkonen, S & Kauppinen, C 2019, 'Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure', Journal of Applied Physics, vol. 126, no. 18, 183104. https://doi.org/10.1063/1.5118771

TY - JOUR

T1 - Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

AU - Shalygin, V. A.

AU - Moldavskaya, M. D.

AU - Vinnichenko, M. Ya

AU - Maremyanin, K. V.

AU - Artemyev, A. A.

AU - Panevin, V. Yu

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Korotyeyev, V. V.

AU - Sakharov, A. V.

AU - Zavarin, E. E.

AU - Arteev, D. S.

AU - Lundin, W. V.

AU - Tsatsulnikov, A. F.

AU - Suihkonen, S.

AU - Kauppinen, C.

PY - 2019/11/14

Y1 - 2019/11/14

N2 - Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.

AB - Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.

UR - http://www.scopus.com/inward/record.url?scp=85075250445&partnerID=8YFLogxK

U2 - 10.1063/1.5118771

DO - 10.1063/1.5118771

M3 - Article

AN - SCOPUS:85075250445

SN - 0021-8979

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 18

M1 - 183104

ER -

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

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