Selective growth of InGaAs on nanoscale InP islands

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Abstract

The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low‐temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three‐dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self‐organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.

Details

Original languageEnglish
Pages (from-to)1662-1664
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number13
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

    Research areas

  • atomic force microscopy, metalorganic vapor phase epitaxy, photoluminescence, quantum well, scanning electron microscopy

ID: 4960538