Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE

Research output: Contribution to journalConference articleScientificpeer-review

Researchers

  • K. Yu Shubina
  • A. M. Mizerov
  • S. N. Timoshnev
  • D. V. Mokhov
  • E. V. Nikitina
  • I. Kim
  • A. D. Bouravleuv

Research units

  • RAS - St. Petersburg Academic University

Abstract

The n+-GaN epilayers were synthesised by PA MBE on the SiO2 patterned GaN/c-Al2O3 templates, grown by MOCVD. Formation of the polycrystalline GaN atop of the SiO2 mask during PA MBE was observed. It was found that macroscopic voids at the interface polycrystalline GaN/SiO2/n-GaN template appeared during the PA MBE process. The polycrystalline GaN film was completely removed by etching in hot aqueous KOH solution. Hall measurements have shown that the value of electron concentration in n+-GaN contact layer is about ne∼4.6×1019 cm-3.

Details

Original languageEnglish
Article number012014
JournalJournal of Physics: Conference Series
Volume1410
Issue number1
Publication statusPublished - 20 Dec 2019
MoE publication typeA4 Article in a conference publication
EventInternational School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Russian Federation
Duration: 22 Apr 201925 Apr 2019
Conference number: 6

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