Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

S. De Gendt*, M. Caymax, J. Chen, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, W. VandervorstT. Witters, E. Young, C. Zhao, M. Heyns

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics II
Subtitle of host publicationproceedings of the Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues : held in Orlando, Florida, October 12-16, 2003
EditorsS. Kar, D. Misra, M. Houssa, D. Landheer, al et al
Pages267-275
Number of pages9
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication
EventInternational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, United States
Duration: 12 Oct 200316 Oct 2003
Conference number: 2

Conference

ConferenceInternational Symposium on High Dielectric Constant Materials
Country/TerritoryUnited States
CityOrlando
Period12/10/200316/10/2003

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