Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi; Oili Ylivaara; Jihong Yim; Riikka Puurunen

doi:10.1016/j.apsadv.2021.100102

Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi^*, Oili Ylivaara, Jihong Yim, Riikka Puurunen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

Original language	English
Article number	100102
Number of pages	5
Journal	Applied Surface Science Advances
Volume	5
Early online date	25 May 2021
DOIs	https://doi.org/10.1016/j.apsadv.2021.100102
Publication status	Published - 1 Sept 2021
MoE publication type	A1 Journal article-refereed

Keywords

Monte Carlo methods
Characterization techniques development
atomic layer deposition
Lateral high aspect ratio structure
Saturation profile
X-ray microanalysis

Access to Document

10.1016/j.apsadv.2021.100102Licence: CC BY-NC-ND

CHEM_Haimi_et_al_Saturation_profile_measurement_2021_Applied_Surface_Science_AdvancesFinal published version, 1.07 MBLicence: CC BY-NC-ND

ALDI: Reactive flow in porous media: modelling and experiments in atomic layer deposition context
Puurunen, R. (Principal investigator), Revitzer, H. (Project Member), Viinikainen, T. (Project Member), Gonsalves, C. (Project Member), Velasco, J. (Project Member), Yim, J. (Project Member), Miikkulainen, V. (Project Member), Ossama, M. (Project Member) & Larkiala, S. (Project Member)
01/09/2020 → 31/08/2024
Project: Academy of Finland: Other research funding
Renable Carbon Cycle - Uusiutuva hiilikierto: Conversion of CO2 to Fuels with Tailored Heterogeneous Catalysts
Puurunen, R. (Principal investigator), Arandia Gutierrez, A. (Project Member), Viinikainen, T. (Project Member), Revitzer, H. (Project Member), Sajid, A. (Project Member), Chahal, A. (Project Member), Yim, J. (Project Member), Karinen, R. (Project Member), Haimi, E. (Project Member), Velasco, J. (Project Member), Kattelus, J. (Project Member), Gonsalves, C. (Project Member) & Singh, A. (Project Member)
01/01/2020 → 31/12/2023
Project: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
Raw Materials Research Infrastructure
Karppinen, M. (Manager)
School of Chemical Engineering
Facility/equipment: Facility

Cite this

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title = "Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure",

abstract = "Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.",

keywords = "Monte Carlo methods, Characterization techniques development, atomic layer deposition, Lateral high aspect ratio structure, Saturation profile, X-ray microanalysis",

author = "Eero Haimi and Oili Ylivaara and Jihong Yim and Riikka Puurunen",

year = "2021",

month = sep,

day = "1",

doi = "10.1016/j.apsadv.2021.100102",

language = "English",

volume = "5",

journal = "Applied Surface Science Advances",

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TY - JOUR

T1 - Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

AU - Haimi, Eero

AU - Ylivaara, Oili

AU - Yim, Jihong

AU - Puurunen, Riikka

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

AB - Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

KW - Monte Carlo methods

KW - Characterization techniques development

KW - atomic layer deposition

KW - Lateral high aspect ratio structure

KW - Saturation profile

KW - X-ray microanalysis

U2 - 10.1016/j.apsadv.2021.100102

DO - 10.1016/j.apsadv.2021.100102

M3 - Article

SN - 2666-5239

VL - 5

JO - Applied Surface Science Advances

JF - Applied Surface Science Advances

M1 - 100102

ER -

Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Abstract

Keywords

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Projects

ALDI: Reactive flow in porous media: modelling and experiments in atomic layer deposition context

Renable Carbon Cycle - Uusiutuva hiilikierto: Conversion of CO2 to Fuels with Tailored Heterogeneous Catalysts

Equipment

OtaNano

Raw Materials Research Infrastructure

Cite this