Room-temperature observation of impurity states in bulk GaAs by photoreflectance

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Room-temperature observation of impurity states in bulk GaAs by photoreflectance. / Pikhtin, A. N.; Airaksinen, V. M.; Lipsanen, H.; Tuomi, T.

In: Journal of Applied Physics, Vol. 65, No. 6, 1989, p. 2556-2557.

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Pikhtin, A. N. ; Airaksinen, V. M. ; Lipsanen, H. ; Tuomi, T. / Room-temperature observation of impurity states in bulk GaAs by photoreflectance. In: Journal of Applied Physics. 1989 ; Vol. 65, No. 6. pp. 2556-2557.

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@article{514573093dd6430a9350073888e81260,
title = "Room-temperature observation of impurity states in bulk GaAs by photoreflectance",
abstract = "Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.",
author = "Pikhtin, {A. N.} and Airaksinen, {V. M.} and H. Lipsanen and T. Tuomi",
year = "1989",
doi = "10.1063/1.342781",
language = "English",
volume = "65",
pages = "2556--2557",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMERICAN INSTITUTE OF PHYSICS",
number = "6",

}

RIS - Download

TY - JOUR

T1 - Room-temperature observation of impurity states in bulk GaAs by photoreflectance

AU - Pikhtin, A. N.

AU - Airaksinen, V. M.

AU - Lipsanen, H.

AU - Tuomi, T.

PY - 1989

Y1 - 1989

N2 - Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

AB - Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

UR - http://www.scopus.com/inward/record.url?scp=0001220734&partnerID=8YFLogxK

U2 - 10.1063/1.342781

DO - 10.1063/1.342781

M3 - Article

VL - 65

SP - 2556

EP - 2557

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -

ID: 5535028