Room-temperature observation of impurity states in bulk GaAs by photoreflectance
Research output: Contribution to journal › Article
Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.
|Number of pages||2|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1989|
|MoE publication type||A1 Journal article-refereed|