Room-temperature observation of impurity states in bulk GaAs by photoreflectance

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

Abstract

Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

Details

Original languageEnglish
Pages (from-to)2556-2557
Number of pages2
JournalJournal of Applied Physics
Volume65
Issue number6
Publication statusPublished - 1989
MoE publication typeA1 Journal article-refereed

Download statistics

No data available

ID: 5535028