Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of South Florida
  • Helmholtz-Zentrum Dresden-Rossendorf

Abstract

Post-synthesis doping of 2D materials is demonstrated by incorporation of vapor-deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H-MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.

Details

Original languageEnglish
Article number1900044
Pages (from-to)1-6
Number of pages6
JournalAdvanced Electronic Materials
Volume5
Issue number5
Publication statusPublished - 1 May 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • 2D materials, diluted ferromagnet, dopants, impurities, magnetism, MoTe

ID: 33040409