Room-Temperature Plasticity of a Nanosized GaN Crystal

Masaki Fujikane*, Shijo Nagao, Dariusz Chrobak, Toshiya Yokogawa, Roman Nowak

*Corresponding author for this work

Research output: Contribution to journalLetterScientificpeer-review

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Abstract

GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates that nanodeconfined GaN compressed along the M direction begins to exhibit room-temperature plasticity, yielding a dislocation-free structure despite the occurrence of considerable, irreversible deformation. Our interest in M-oriented, strained GaN nanoobjects was sparked by the results of first-principles bandgap calculations, whereas subsequent nanomechanical tests and ultrahigh-voltage (1250 kV) transmission electron microscopy observations confirmed the authenticity of the phenomenon. Moreover, identical experiments along the C direction produced only a quasi-brittle response. Precisely how this happens is demonstrated by molecular dynamics simulations of the deformation of the C- and M-oriented GaN frustum, which mirror our nanopillar crystals.

Original languageEnglish
Pages (from-to)6425–6431
Number of pages7
JournalNano Letters
Volume21
Issue number15
Early online date27 Jul 2021
DOIs
Publication statusPublished - 11 Aug 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • ab initio calculations
  • GaN nanocrystals
  • MD-simulations
  • nanoscale compression
  • plasticity
  • ultrahigh voltage electron microscopy

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