Room temperature operation of a high output current magnetic tunnel transistor

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Room temperature operation of a high output current magnetic tunnel transistor. / van Dijken, Sebastiaan; Jiang, Xin; Parkin, Stuart S P.

In: Applied Physics Letters, Vol. 80, No. 18, 06.05.2002, p. 3364-3366.

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van Dijken, Sebastiaan ; Jiang, Xin ; Parkin, Stuart S P. / Room temperature operation of a high output current magnetic tunnel transistor. In: Applied Physics Letters. 2002 ; Vol. 80, No. 18. pp. 3364-3366.

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@article{0d31e53ee4264d30b32dfd8d412dbd0a,
title = "Room temperature operation of a high output current magnetic tunnel transistor",
abstract = "The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al2O3 tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 μA and magnetocurrent changes of 64{\%} are obtained at room temperature.",
author = "{van Dijken}, Sebastiaan and Xin Jiang and Parkin, {Stuart S P}",
year = "2002",
month = "5",
day = "6",
doi = "10.1063/1.1474610",
language = "English",
volume = "80",
pages = "3364--3366",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "18",

}

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TY - JOUR

T1 - Room temperature operation of a high output current magnetic tunnel transistor

AU - van Dijken, Sebastiaan

AU - Jiang, Xin

AU - Parkin, Stuart S P

PY - 2002/5/6

Y1 - 2002/5/6

N2 - The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al2O3 tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 μA and magnetocurrent changes of 64% are obtained at room temperature.

AB - The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al2O3 tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 μA and magnetocurrent changes of 64% are obtained at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=79956016569&partnerID=8YFLogxK

U2 - 10.1063/1.1474610

DO - 10.1063/1.1474610

M3 - Article

VL - 80

SP - 3364

EP - 3366

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -

ID: 5350660