Room temperature operation of a high output current magnetic tunnel transistor

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)3364-3366
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number18
StatePublished - 6 May 2002
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • IBM Research
  • Stanford University

Abstract

The structure and properties of a magnetic tunnel transistor with high current output at room temperature are presented. The transistor marries a two-terminal magnetic tunnel junction with an Al2O3 tunnel barrier and a GaAs collector. The output current depends on the spin-dependent transport of hot electrons in the base layer of the transistor, which is formed from a single ultrathin ferromagnetic film. At a bias voltage of 1.4 V across the tunnel barrier, output currents larger than 1 μA and magnetocurrent changes of 64% are obtained at room temperature.

ID: 5350660