Room-temperature observation of impurity states in bulk GaAs by photoreflectance

A. N. Pikhtin; V. M. Airaksinen; H. Lipsanen; T. Tuomi

doi:10.1063/1.342781

Room-temperature observation of impurity states in bulk GaAs by photoreflectance

A. N. Pikhtin^*, V. M. Airaksinen, H. Lipsanen, T. Tuomi

^*Corresponding author for this work

Department of Applied Physics

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Abstract

Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

Original language	English
Pages (from-to)	2556-2557
Number of pages	2
Journal	Journal of Applied Physics
Volume	65
Issue number	6
DOIs	https://doi.org/10.1063/1.342781
Publication status	Published - 1989
MoE publication type	A1 Journal article-refereed

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@article{514573093dd6430a9350073888e81260,

title = "Room-temperature observation of impurity states in bulk GaAs by photoreflectance",

abstract = "Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.",

author = "Pikhtin, {A. N.} and Airaksinen, {V. M.} and H. Lipsanen and T. Tuomi",

year = "1989",

doi = "10.1063/1.342781",

language = "English",

volume = "65",

pages = "2556--2557",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Room-temperature observation of impurity states in bulk GaAs by photoreflectance

AU - Pikhtin, A. N.

AU - Airaksinen, V. M.

AU - Lipsanen, H.

AU - Tuomi, T.

PY - 1989

Y1 - 1989

N2 - Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

AB - Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

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U2 - 10.1063/1.342781

DO - 10.1063/1.342781

M3 - Article

AN - SCOPUS:0001220734

SN - 0021-8979

VL - 65

SP - 2556

EP - 2557

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Room-temperature observation of impurity states in bulk GaAs by photoreflectance

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