Robust Magnetoelectric Effect in the Decorated Graphene/In2Se3Heterostructure

Jing Shang, Xiao Tang, Yuantong Gu, Arkady V. Krasheninnikov, Silvia Picozzi, Changfeng Chen, Liangzhi Kou*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

The magnetoelectric effect is a fundamental physical phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM)-decorated graphene layer via a ferroelectrically induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon-p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in the TM-decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of ferroelectrically controlled magnetism in two-dimensional (2D) materials.

Original languageEnglish
Pages (from-to)3033-3039
Number of pages7
JournalACS Applied Materials and Interfaces
Volume13
Issue number2
Early online date2021
DOIs
Publication statusPublished - 20 Jan 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • d-orbital shifts
  • ferroelectric-controlled magnetism
  • first-principles calculations
  • heterostructure
  • magnetoelectric effect

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