rf-electrometer using a carbon nanotube resonant tunneling transistor

Lorenz G. Lechner, Fan Wu, Romain Danneau, Søren E. Andresen, Pertti Hakonen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
3 Downloads (Pure)

Abstract

We have studied resonant tunneling transistors (RTT) made of single-walled carbon nanotube quantum dots in the Fabry–Pérot regime. We show sensitivity to input charge as high as 5×10−6 e/Hz1/2 with a carrier frequency of 719 MHz at 4.2 K. This result is comparable to the best values of charge sensitivity so far reported for radio frequency single electron transistors (rf-SET). Unlike SETs, whose operating temperature is limited as Coulomb blockade vanishes as 1/T, a RTT can operate at higher temperatures, since the dephasing length lϕ∝1/T2/3.
Original languageEnglish
Article number084316
Pages (from-to)1-3
Number of pages3
JournalJournal of Applied Physics
Volume107
Issue number8
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • carbon nanotube
  • rf-electromete

Fingerprint

Dive into the research topics of 'rf-electrometer using a carbon nanotube resonant tunneling transistor'. Together they form a unique fingerprint.

Cite this