Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors

Research output: Contribution to journalLiterature reviewScientificpeer-review

Researchers

Research units

Abstract

Point defects play an important role in present day semiconductor devices. Their ability to influence both the electrical and optical properties of a semiconductor together with the decreasing device size, makes the knowledge of their nature a crucial ingredient in the applicability of a specific semiconductor material. There are very few experimental techniques that alone can identify and quantify point defects. In this review, we show how positron annihilation spectroscopy combined with density functional theory calculations can be used in narrow bandgap semiconductors to identify point defects. Examples are presented of defect identification in both traditional semiconductors (Ge), compound bulk semiconductors (GaSb) and epitaxial layers (GaSb and InN). (c) 2016 The Electrochemical Society. All rights reserved.

Details

Original languageEnglish
Pages (from-to)P3166-P3171
Number of pages6
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number4
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

    Research areas

  • AUGMENTED-WAVE METHOD, TOTAL-ENERGY CALCULATIONS, LIFETIME SPECTROSCOPY, GALLIUM ANTIMONIDE, UNDOPED GASB, BASIS-SET, INN, VACANCY, GERMANIUM, RADIATION

ID: 3217353