Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation

Research output: Contribution to journalArticleScientificpeer-review


  • Philipp Valerius
  • Silvan Kretschmer
  • Boris V. Senkovskiy
  • Shilong Wu
  • Joshua Hall
  • Alexander Herman
  • Niels Ehlen
  • Mahdi Ghorbani-Asl
  • Alexander Grueneis
  • Arkady V. Krasheninnikov
  • Thomas Michely

Research units

  • Helmholtz Zentrum Dresden Rossendorf, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz Association, Inst Ion Beam Phys & Mat Res
  • Univ Duisburg Essen, University of Duisburg Essen, Fak Phys
  • University of Cologne


By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS2 to 500 eV Xe+ irradiation is obtained. The MoS2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of ions cm(-2) and without inducing damage underneath the MoS2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.


Original languageEnglish
Article number025005
Number of pages11
Journal2D Materials
Issue number2
Publication statusPublished - Apr 2020
MoE publication typeA1 Journal article-refereed

    Research areas

  • MoS2, molecular dynamics simulation, graphene, Ir(111), ion irradiation, scanning tunneling microscopy, phase transformation, TRANSITION, EVOLUTION

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