Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation

Research output: Contribution to journalArticle

Researchers

  • Philipp Valerius
  • Silvan Kretschmer
  • Boris V. Senkovskiy
  • Shilong Wu
  • Joshua Hall
  • Alexander Herman
  • Niels Ehlen
  • Mahdi Ghorbani-Asl
  • Alexander Grueneis
  • Arkady Krasheninnikov

  • Thomas Michely

Research units

  • Helmholtz Zentrum Dresden Rossendorf, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz Association, Inst Ion Beam Phys & Mat Res
  • Univ Duisburg Essen, University of Duisburg Essen, Fak Phys
  • University of Cologne

Abstract

By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS2 to 500 eV Xe+ irradiation is obtained. The MoS2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of ions cm(-2) and without inducing damage underneath the MoS2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.

Details

Original languageEnglish
Article number025005
Number of pages11
Journal2D Materials
Volume7
Issue number2
Publication statusPublished - Apr 2020
MoE publication typeA1 Journal article-refereed

    Research areas

  • MoS2, molecular dynamics simulation, graphene, Ir(111), ion irradiation, scanning tunneling microscopy, phase transformation, TRANSITION, EVOLUTION

ID: 40548650