Resonant features of the terahertz generation in semiconductor nanowires

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • G. E. Cirlin
  • D. I. Kuritsyn
  • V. V. Rumyantsev
  • S. V. Morosov
  • J. P. Kakko
  • Teppo Huhtio

  • Harri Lipsanen

Research units

  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Russian Academy of Sciences
  • Nizhny Novgorod State University
  • RAS - Ioffe Physico Technical Institute

Abstract

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

Details

Original languageEnglish
Pages (from-to)1561-1565
Number of pages5
JournalSemiconductors
Volume50
Issue number12
Publication statusPublished - 1 Dec 2016
MoE publication typeA1 Journal article-refereed

ID: 10712054