Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

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Original languageEnglish
Pages (from-to)6852–6859
JournalAdvanced Materials
Volume28
Issue number32
Publication statusPublished - Aug 2016
MoE publication typeA1 Journal article-refereed

    Research areas

  • Ferroelectric tunnel junctions, Oxygen vacancy migration, Resistive switching, Transition metal oxides, Tsu-Esaki tunneling current formula

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