Residual stress study of thin films deposited by atomic layer deposition

Zhen Zhu; Emma Salmi; Sauli Virtanen

doi:10.1109/ASICON.2017.8252455

Residual stress study of thin films deposited by atomic layer deposition

Zhen Zhu, Emma Salmi, Sauli Virtanen

Beneq Oy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al₂O₃ and Al₂O₃/TiO₂ laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al₂O₃ and Al₂O₃/TiO₂ laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

Original language	English
Title of host publication	Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
Publisher	IEEE
Pages	233-236
Number of pages	4
Volume	2017-October
ISBN (Electronic)	9781509066247
DOIs	https://doi.org/10.1109/ASICON.2017.8252455
Publication status	Published - 8 Jan 2018
MoE publication type	A4 Conference publication
Event	IEEE International Conference on Advanced Semiconductor Integrated Circuits - Guiyang, China Duration: 25 Oct 2017 → 28 Oct 2017 Conference number: 12

Conference

Conference	IEEE International Conference on Advanced Semiconductor Integrated Circuits
Abbreviated title	ASICON
Country/Territory	China
City	Guiyang
Period	25/10/2017 → 28/10/2017

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@inproceedings{e3b3780f1618411ca778274ec714a059,

title = "Residual stress study of thin films deposited by atomic layer deposition",

abstract = "Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.",

author = "Zhen Zhu and Emma Salmi and Sauli Virtanen",

year = "2018",

month = jan,

day = "8",

doi = "10.1109/ASICON.2017.8252455",

language = "English",

volume = "2017-October",

pages = "233--236",

booktitle = "Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017",

publisher = "IEEE",

address = "United States",

note = "IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON ; Conference date: 25-10-2017 Through 28-10-2017",

}

Zhu, Z, Salmi, E & Virtanen, S 2018, Residual stress study of thin films deposited by atomic layer deposition. in Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. vol. 2017-October, IEEE, pp. 233-236, IEEE International Conference on Advanced Semiconductor Integrated Circuits, Guiyang, China, 25/10/2017. https://doi.org/10.1109/ASICON.2017.8252455

TY - GEN

T1 - Residual stress study of thin films deposited by atomic layer deposition

AU - Zhu, Zhen

AU - Salmi, Emma

AU - Virtanen, Sauli

N1 - Conference code: 12

PY - 2018/1/8

Y1 - 2018/1/8

N2 - Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

AB - Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

UR - http://www.scopus.com/inward/record.url?scp=85044792768&partnerID=8YFLogxK

U2 - 10.1109/ASICON.2017.8252455

DO - 10.1109/ASICON.2017.8252455

M3 - Conference article in proceedings

AN - SCOPUS:85044792768

VL - 2017-October

SP - 233

EP - 236

BT - Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017

PB - IEEE

T2 - IEEE International Conference on Advanced Semiconductor Integrated Circuits

Y2 - 25 October 2017 through 28 October 2017

ER -

Residual stress study of thin films deposited by atomic layer deposition

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