Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Riikka L. Puurunen

doi:10.1063/1.1943503

Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Riikka L. Puurunen

Not published at Aalto University

Research output: Contribution to journal › Comment/debate › Scientific › peer-review

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Abstract

This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.

Original language	English
Article number	016102
Pages (from-to)	1-2
Journal	Journal of Applied Physics
Volume	98
Issue number	1
DOIs	https://doi.org/10.1063/1.1943503
Publication status	Published - 1 Jul 2005
MoE publication type	B1 Non-refereed journal articles

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10.1063/1.1943503

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AB - This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.

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Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Abstract

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