Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

Research output: Working paperProfessional

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Original languageEnglish
Place of PublicationBerlin, Germany
Pages1401-1404
Publication statusPublished - 1996
MoE publication typeD4 Published development or research report or study

Publication series

NameThe Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996

    Research areas

  • optoelectronics, semiconductors

ID: 5174976