Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

S. Grosse; J. Sandmann; G. von Plessen; J. Feldmann; H. Lipsanen; M. Sopanen; J. Tulkki; J. Ahopelto

Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

S. Grosse, J. Sandmann, G. von Plessen, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, J. Ahopelto

Research output: Working paper › Professional

Original language	English
Place of Publication	Berlin, Germany
Pages	1401-1404
Publication status	Published - 1996
MoE publication type	D4 Published development or research report or study

Publication series

Name	The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996

Keywords

optoelectronics
semiconductors

Cite this

Grosse, S., Sandmann, J., von Plessen, G., Feldmann, J., Lipsanen, H., Sopanen, M., Tulkki, J., & Ahopelto, J. (1996). Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots. (pp. 1401-1404). (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996).

Grosse, S. ; Sandmann, J. ; von Plessen, G. ; Feldmann, J. ; Lipsanen, H. ; Sopanen, M. ; Tulkki, J. ; Ahopelto, J. / Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots. Berlin, Germany, 1996. pp. 1401-1404 (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996).

@techreport{881e112902854ed9947a59929707f17f,

title = "Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "S. Grosse and J. Sandmann and {von Plessen}, G. and J. Feldmann and H. Lipsanen and M. Sopanen and J. Tulkki and J. Ahopelto",

year = "1996",

language = "English",

series = "The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996",

pages = "1401--1404",

type = "WorkingPaper",

}

Grosse, S, Sandmann, J, von Plessen, G, Feldmann, J, Lipsanen, H , Sopanen, M, Tulkki, J & Ahopelto, J 1996 'Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots' The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996, Berlin, Germany, pp. 1401-1404.

Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots. / Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

Berlin, Germany, 1996. p. 1401-1404 (The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996).

Research output: Working paper › Professional

TY - UNPB

T1 - Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

AU - Grosse, S.

AU - Sandmann, J.

AU - von Plessen, G.

AU - Feldmann, J.

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Tulkki, J.

AU - Ahopelto, J.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Working paper

T3 - The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin 1996

SP - 1401

EP - 1404

BT - Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

CY - Berlin, Germany

ER -