Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique

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Original languageEnglish
Pages (from-to)276-280
JournalJournal of Crystal Growth
Volume298
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • A1GaN, MOCVD, nucleation, threading dislocations

ID: 3412982