Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique

Teemu Lang, Maxim Odnoblydov, Vladislav Bougrov, Sami Suihkonen, Olli Svensk, Pekka Törmä, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)276-280
    JournalJournal of Crystal Growth
    Volume298
    Publication statusPublished - 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • A1GaN
    • MOCVD
    • nucleation
    • threading dislocations

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