Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel, J. S. Reparaz, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, B. Graczykowski, A. Shchepetov, H. Jiang, M. Prunnila, J. Ahopelto, F. Alzina, C. M. Sotomayor Torres*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

Original languageEnglish
Article number012113
Pages (from-to)1-6
JournalAPL Materials
Volume2
Issue number1
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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    Chávez-Ángel, E., Reparaz, J. S., Gomis-Bresco, J., Wagner, M. R., Cuffe, J., Graczykowski, B., ... Sotomayor Torres, C. M. (2014). Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry. APL Materials, 2(1), 1-6. [012113]. https://doi.org/10.1063/1.4861796