Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel; J. S. Reparaz; J. Gomis-Bresco; M. R. Wagner; J. Cuffe; B. Graczykowski; A. Shchepetov; H. Jiang; M. Prunnila; J. Ahopelto; F. Alzina; C. M. Sotomayor Torres

doi:10.1063/1.4861796

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel, J. S. Reparaz, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, B. Graczykowski, A. Shchepetov, H. Jiang, M. Prunnila, J. Ahopelto, F. Alzina, C. M. Sotomayor Torres^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

Original language	English
Article number	012113
Pages (from-to)	1-6
Journal	APL Materials
Volume	2
Issue number	1
DOIs	https://doi.org/10.1063/1.4861796
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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10.1063/1.4861796

1.4861796Final published version, 726 KBLicence: CC BY

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Chávez-Ángel, E., Reparaz, J. S., Gomis-Bresco, J., Wagner, M. R., Cuffe, J., Graczykowski, B., Shchepetov, A., Jiang, H., Prunnila, M., Ahopelto, J., Alzina, F., & Sotomayor Torres, C. M. (2014). Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry. APL Materials, 2(1), 1-6. [012113]. https://doi.org/10.1063/1.4861796

Chávez-Ángel, E. ; Reparaz, J. S. ; Gomis-Bresco, J. ; Wagner, M. R. ; Cuffe, J. ; Graczykowski, B. ; Shchepetov, A. ; Jiang, H. ; Prunnila, M. ; Ahopelto, J. ; Alzina, F. ; Sotomayor Torres, C. M. / Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry. In: APL Materials. 2014 ; Vol. 2, No. 1. pp. 1-6.

@article{9e26ab6f4ae3440393b4594cefc092d2,

title = "Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry",

abstract = "We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.",

author = "E. Ch{\'a}vez-{\'A}ngel and Reparaz, {J. S.} and J. Gomis-Bresco and Wagner, {M. R.} and J. Cuffe and B. Graczykowski and A. Shchepetov and H. Jiang and M. Prunnila and J. Ahopelto and F. Alzina and {Sotomayor Torres}, {C. M.}",

year = "2014",

doi = "10.1063/1.4861796",

language = "English",

volume = "2",

pages = "1--6",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "1",

}

Chávez-Ángel, E, Reparaz, JS, Gomis-Bresco, J, Wagner, MR, Cuffe, J, Graczykowski, B, Shchepetov, A, Jiang, H, Prunnila, M, Ahopelto, J, Alzina, F & Sotomayor Torres, CM 2014, 'Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry', APL Materials, vol. 2, no. 1, 012113, pp. 1-6. https://doi.org/10.1063/1.4861796

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry. / Chávez-Ángel, E.; Reparaz, J. S.; Gomis-Bresco, J.; Wagner, M. R.; Cuffe, J.; Graczykowski, B.; Shchepetov, A.; Jiang, H.; Prunnila, M.; Ahopelto, J.; Alzina, F.; Sotomayor Torres, C. M.

In: APL Materials, Vol. 2, No. 1, 012113, 2014, p. 1-6.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

AU - Chávez-Ángel, E.

AU - Reparaz, J. S.

AU - Gomis-Bresco, J.

AU - Wagner, M. R.

AU - Cuffe, J.

AU - Graczykowski, B.

AU - Shchepetov, A.

AU - Jiang, H.

AU - Prunnila, M.

AU - Ahopelto, J.

AU - Alzina, F.

AU - Sotomayor Torres, C. M.

PY - 2014

Y1 - 2014

N2 - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

AB - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

UR - http://www.scopus.com/inward/record.url?scp=84896349744&partnerID=8YFLogxK

U2 - 10.1063/1.4861796

DO - 10.1063/1.4861796

M3 - Article

AN - SCOPUS:84896349744

VL - 2

SP - 1

EP - 6

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 1

M1 - 012113

ER -

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

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